jiangsu changjiang electronics technology co., ltd sot-23 plastic-encapsulate transistors MMBT1616A transistor (npn) features z audio frequency power amplifier z medium speed switching marking:16a maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =10a, i e =0 120 v collector-emitter breakdown voltage v (br)ceo i c =2ma, i b =0 60 v emitter-base breakdown voltage v (br)ebo i e =10a, i c =0 6 v collector cut-off current i cbo v cb = 60v, i e =0 100 na emitter cut-off current i ebo v eb =6v, i c =0 100 na h fe(1) v ce =2v, i c =100ma 135 600 dc current gain h fe(2) v ce =2v, i c =1a 81 collector-emitter saturation voltage v ce(sat) i c =1a, i b =50ma 0.3 v collector-emitter saturation voltage v be(sat) i c =1a, i b =50ma 1.2 v base-emitter voltage v be v ce =2v, i c =50ma 0.6 0.7 v transition frequency f t v ce =2v,i c =100ma, f=100mhz 100 mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz 19 pf classification of h fe(1) rank y g l range 135~270 200~400 300~600 symbol parameter value unit v cbo collector-base voltage 120 v v ceo collector-emitter voltage 60 v v ebo emitter-base voltage 6 v i c collector current 1 a p c collector power dissipation 350 mw r ja thermal resistance from junction to ambient 357 /w t j junction temperature 150 t stg storage temperature -55 +150 sot C 23 1. base 2. emitter 3. collector j c ( t www.cj-elec.com 1 a,jun,2014 www.cj-elec.com d,aug,2015
0.1 1 10 1 10 100 1000 20 40 60 80 100 0 50 100 150 200 250 1 10 100 1000 10 100 1000 0.1 1 10 100 1000 0 200 400 600 800 1000 200 400 600 800 1000 0 50 100 150 200 0246810 0.0 0.1 0.2 0.3 0.4 0.5 200 400 600 800 1000 0.1 1 10 100 1000 5 100 f=1mhz i e =0 / i c =0 t a =25 o c reverse voltage v (v) capacitance c (pf) v cb / v eb c ob / c ib ?? c ib c ob 20 transition frequency f t (mhz) collector current i c (ma) v ce =2v t a =25 o c i c f t ?? v ce = 2v t a =100 o c t a =25 o c collector current i c (ma) dc current gain h fe i c h fe ?? collector current i c (ma) base-emitter saturation voltage v besat (mv) t a =25 t a =100 =20 i c v besat ?? t a =25 t a =100 =20 v cesat ?? i c collector-emitter saturation voltage v cesat (mv) collector current i c (ma) common emitter t a =25 1ma 0.9ma 0.8ma 0.7ma 0.6ma 0.5ma 0.4ma 0.3ma 0.2ma i b =0.1ma collector-emitter voltage v ce (v) collector current i c (a) static characteristic vce=2v ta=25 ta=100 o c base-emitter voltage v be (mv) collector current i c (ma) i c ??v be 0 25 50 75 100 125 150 0.0 0.1 0.2 0.3 0.4 0.5 collector power dissipation p c (w) ambient temperature t a ( ) p c ?? t a www.cj-elec.com 2 a,jun,2014 www.cj-elec.com d,aug,2015 t y pical characteristics
min max mi n m ax a 0.900 1.150 0.035 0.045 a1 0.000 0.100 0.000 0.004 a2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 d 2.800 3.000 0.110 0.118 e 1.200 1.400 0.047 0.055 e1 2.250 2.550 0.089 0.100 e e1 1.800 2.000 0.071 0.079 l l1 0.300 0.500 0.012 0.020 0 8 0 6 0.550 ref 0.022 ref symbol dimensions in inches dimensions in millimeters 0.950 typ 0.037 typ sot-23 package outline dimensions sot-23 suggested pad layout www.cj-elec.com 3 a,jun,2014 www.cj-elec.com d,aug,2015
sot-23 tape and reel www.cj-elec.com 4 a,jun,2014 www.cj-elec.com d,aug,2015
|
